Z. Yahiya Khalid; . Al-Baldawi AmmarM; H. Jraiz Ammar
Abstract
In this paper, a laser ellipsometric method is implemented to study theformation of oxide films on silicon substrate at room temperature in air. Twolasers, He-Ne and semiconductor diode, ...
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In this paper, a laser ellipsometric method is implemented to study theformation of oxide films on silicon substrate at room temperature in air. Twolasers, He-Ne and semiconductor diode, as well as a tungsten halogen lamp,were used as a light source in this method to show the importance ofcoherency for accurate results. The thickness of oxide layer was measured andthe results is compared with that calculated for a monolayer of oxide.Behavior of thermally formed oxides was studied using ellipsometry todetermine polarizer angle as a function of etching time.
