Duaa A. Mohammed; Muslim F. Jawad
Abstract
In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and ...
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In this study, In2O3 thin films were deposited on quartz substrates bypulsed laser deposition technique at room temperature and followed bythermally annealing at 300℃, 400℃ and 500℃ for 1 hour. The optical bandgap was found to increase with the annealing temperature from 3.5 to 3.85 eVand the transmittance was observed above 90%. XRD results show that the filmsare polycrystalline in nature and crystallizes with preferred orientation (222).SEM images show that the films are
