Physical Properties of MOS Porous Silicon Detector Fabricated under RTO Method
Physical Properties of MOS Porous Silicon Detector Fabricated under RTO Method

Alwan M. Alwan; Wafaa K. Khalaf; Narges Z. Abdulzahra

Volume 27, Issue 11 , August 2009, , Page 2286-2291

https://doi.org/10.30684/etj.27.11.10

Abstract
  In this research we studying the sensitivity of a porous silicon photo detector, wefound it improved through rapid thermal oxidation processes. Under our optimumpreparation conditions, ...  Read More ...
Effect on Rapid Thermal Oxidation process on Electrical Properties of Porous Silicon
Effect on Rapid Thermal Oxidation process on Electrical Properties of Porous Silicon

Khawla S. Khashan; Amany A. Awaad; Maysaa A.Mohamed

Volume 27, Issue 4 , March 2009, , Page 663-674

https://doi.org/10.30684/etj.27.4.4

Abstract
  In this work, the porous silicon was prepared by using stain etching in HF-HNO3 atdifferent etching times. Then Rapid Thermal Oxidation (RTO) processes were used forsurface treatment ...  Read More ...
The Effect Of Thermal Oxidation Time On The Structure And Influence On Optical Properties For Porous Silicon Prepared By Photo Electrochemical Etching
The Effect Of Thermal Oxidation Time On The Structure And Influence On Optical Properties For Porous Silicon Prepared By Photo Electrochemical Etching

Alwan M.Alwan; Narges Z.Abd alzahra

Volume 27, Issue 4 , March 2009, , Page 727-735

https://doi.org/10.30684/etj.27.4.9

Abstract
  The morphological properties of the freshly and oxidized porous silicon atoxidation time (60, 90) sec were studied. A blue emission from PSi can be seen witheyes after thermal oxidation ...  Read More ...
Organic Vapors Sensor Based on Dangling Bonds of Porous Silicon
Organic Vapors Sensor Based on Dangling Bonds of Porous Silicon

Alwan M. Alwan

Volume 25, Issue 8 , October 2007, , Page 1023-1027

https://doi.org/10.30684/etj.25.8.10

Abstract
  In this paper, a porous silicon (PS) layer is investigated as a sensing materialto detect the organic vapors with low concentration. The structure of theprepared sensor consists of ...  Read More ...
Light-Induced Etching of Silicon
Light-Induced Etching of Silicon

A. M. Ahmed; Alwan. M. Alwan

Volume 25, Issue 3 , May 2007, , Page 467-474

https://doi.org/10.30684/etj.25.3.18

Abstract
  In this work, an ordinary light is used for photo-chemical etching of n-typesilicon wafer in HF solution. Scanning electron microscopy is used to monitorchanges in surface morphology ...  Read More ...